Classification of IGCT
In terms of internal structure, IGCT can be divided into the following three categories:
(1) Asymmetric
It is a pure PNPN thyristor structure. The device can withstand high voltage in the forward direction, but it does not have the ability to withstand reverse voltage and cannot flow through reverse current. It is generally required that a diode be connected externally in parallel.
In terms of structure, Reverse blocking type is the series connection between a PNPN thyristor and a diode. Current can only flow from one direction (from anode to cathode). The series secondary tube provides this kind of devices with the ability to withstand the reverse voltage.
In the structure, a PNPN thyristor is in parallel with a relay diode in reverse. Current can flow in both directions and cannot withstand reverse voltage. Because GCT is integrated with the current diode on the same chip, there is no need to parallel the current diode from the outside, so the converter is simpler in structure and smaller in volume.

5SHX2645L0004 3BHB003154R0101

3BHB003154R0101 3BHL000389P0104 IGCT module