5SHY4045L0003 3BHB021400 3BHE019719R0101 GVC736BE101 Diode and grid drive circuits

IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume of converter device, bringing a new leap to power electronic complete sets of devices. IGCT integrates the GTO chip with the reverse parallel diode and gate driver circuit, and then connects it with the gate driver at the periphery in a low inductance way. It combines the stable turn-off ability of the transistor and the advantages of the low-pass state loss of the thyristor, and gives play to the performance of the thyristor at the turn-off stage, and presents the characteristics of the transistor at the turn-off stage. IGCT has the characteristics of large current, high voltage, high switching frequency, high reliability, compact structure, low loss, and low cost, high yield, has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cut-off voltage compared with IGBT using transistor technology. However, the widely used standard GTO drive technology causes uneven opening and closing process, which requires high cost dv/dt and di/dt absorption circuit and high power grid drive unit. Consequently, the reliability is reduced, the price is higher, and it is not conducive to series. However, before the high power MCT technology is mature, IGCT has become the preferred solution for high voltage and high power low frequency communicators.