中文版
Description
IGCT integrated Gate Commutated Thyristors (ntergrated Gate Commutated Thyristors) is a power semiconductor switching device (integrated gate commutated thyristors = gate commutated thyristors + gate units) developed by medium voltage frequency converters for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.
5SHY4045L0006-3BHB030310R0001
GCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the transistor
The performance of the transistor is displayed in the on-phase, and the characteristics of the transistor are displayed in the off-phase. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect
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