5SHY6545L0001-AC10272001R0101-5SXE10-0181

Description

5SHY6545L0001-AC10272001R0101-5SXE10-0181

GCT integrated Gate Commutated Thyristors (GCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a type of power semiconductor switching device developed by a medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.
IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor.

The performance of the thyristor is played in the on-off stage, and the characteristics of the transistor are displayed in the off-off stage. IGCT has the characteristics of large current, high positive off voltage, high switching frequency, high reliability, compact structure, low on-loss, etc., and causes low cost, high yield, and has a good application prospect.

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