Description
3BHE046836R0101 ABB | Controller system in stock
Product technology
IGCT integrated Gate Commutated Thyristors (Intergrated Gate Commutated Thyristors) is a new type of power semiconductor switching device from medium-voltage converter to commutated thyristors (integrated gate commutator thyristors = gate commutator thyristors + gate unit). It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume of converter device, bringing a new leap to power electronic complete sets of devices. IGCT integrates the GTO chip with the reverse parallel diode and gate drive circuit, and then connects it with the gate driver at the periphery in a low inductance way. It combines the stable turn-off ability of the transistor and the advantages of the low-pass state loss of the thyristor, and gives play to the performance of the thyristor at the turn-off stage and presents the characteristics of the transistor at the turn-off stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on. It also has the advantages of low cost, high yield and good application prospect. The IGCT has been used in power system power grid device (100MVA) and medium power industrial drive device (5MW) in the field of medium voltage converter has been successfully applied for 11 years (up to 2009), because of the high speed switching capability of IGCT without buffer circuit, the number of power components required is less, and the reliability of operation is greatly increased.
Please contact Manager He
Engineer :Sunny
QQ:3095989363
Mobile phone/wechat number :+86-18059884797
Email :sales@xiongbagk.cn
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condition: new original packaging
Warranty: All new or repaired parts come with a 12 month warranty
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➱ sales manager: Sunny
➱ email mailto: sales@xiongbagk.cn
➱ Skype/WeChat: 18059884797
➱ phone/Whatsapp: + 86 18059884797
➱ QQ: 3095989363
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