5SHY4045L0006 3BHB030310R0001 3BHE039203R0101 GVC736CE101 integrated Gate Converter thyristor

Product details:

5SHY4045L0006 3BHB030310R0001 3BHE039203R0101 GVC736CE101 IGCT integrated Gate Commutated Thyristors (Intergrated Gate Commutated Thyristors) is formed from from integrating the GTO chip with commutation diode and gate drive circuit, and from being connected with gate driver externally with low inductance.

5SHY3545L0009

The principle is related to the shut-off thyristor (GTO). IGCT is similar to the shut-off thyristor (GTO), which is a fully controllable power switch whose on-off and off-off are controlled by a control signal (gate). Gate driven circuits generally integrate the thyristor components integrated gate commutator thyristor IGCT combines the advantages of IGBT and GTO. Its capacity is comparable to that of GTO, but the switching speed is 10 times faster than that of GTO, and it can save the application of GTO is a large and complex buffer circuit, but the required drive power is still large.

Currently, IGCTs are competing with IGBTs and other novel devices to eventually replace Gtos in high-power applications. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss, and low cost, high yield, so it has a good application prospect.