5SHX0845F0001 integrated gate commutator thyristor

The 5SHX0845F0001 is not an integrated gate commutator thyristor (IGBT) model. In fact, according to the

information I have, 5SHX0845F0001 is a variable frequency drive model, which belongs to the industrial automation system spare parts, and is a new original product.

As for integrated gate commutated thyristor (IGBT), it is a compound fully controlled voltage-driven power

semiconductor device, which is mainly composed of IGBT power chip and peripheral circuit. IGBT combines the

advantages of insulated gate bipolar transistor (IGBT) and power transistor (GTR), which not only

has the advantages of low drive power and low saturation voltage

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Description

5SHX0845F0001 integrated gate commutator thyristor

The 5SHX0845F0001 is not an integrated gate commutator thyristor (IGBT) model. In fact, according to the

information I have, 5SHX0845F0001 is a variable frequency drive model, which belongs to the industrial automation system spare parts, and is a new original product.

As for integrated gate commutated thyristor (IGBT), it is a compound fully controlled voltage-driven power

semiconductor device, which is mainly composed of IGBT power chip and peripheral circuit. IGBT combines the

advantages of insulated gate bipolar transistor (IGBT) and power transistor (GTR), which not only

has the advantages of low drive power and low saturation voltage, And especially suitable for DC voltage 600V and

above converter system such as traction, motor speed regulation, switching power supply, ballast, induction heating,

reactive power compensation, variable frequency speed regulation, metallurgy and mining, electric locomotive,

electric traction, electric vehicles, electric vehicles, wind power generation, rail transit, household appliances and other fields.

5SHX0845F0001

The IGBT (Insulated Gate Bipolar Transistor) chip is a power semiconductor device that combines the advantages of

MOSFETs (metal-oxide semiconductor field-effect transistors) and BJT (bipolar junction transistors) and is widely

used in many applications. IGBT chips have high power density, low switching loss and low on-voltage drop,

making them a key component in power electronic devices.

IGBT chips are usually composed of N-type and P-type channels, sandwiched with PN diodes, forming a four-layer

structure. During operation, the switching behavior of the chip is controlled by the voltage applied to the control

pole. If a positive driving voltage is added between the gate and the emitter of the IGBT, the MOSFET is switched

on, so that the PNP transistor becomes a low-resistance state between the collector and the base and the

transistor is switched on. If the voltage between the gate and emitter of the IGBT is 0V, the MOS

cut-off cuts off the supply of base current to the PNP transistor, making the transistor cut-off.

IGBT chips are widely used in many fields, including but not limited to frequency converters, inverters, power

transmission and distribution, electric vehicles, high-speed railways, renewable energy, and industrial power control

systems. With the promotion of the concept of energy conservation and environmental protection, IGBT chips

such products will become more and more common in the market, as the core device of energy conversion and

transmission, its position in the national strategic emerging industries is also increasingly prominent.

Please contact Sunny sales@xiongbagk.cn for the best price.

➱ sales manager: Sunny
➱ email mailto: sales@xiongbagk.cn
➱ Skype/WeChat: 18059884797
➱ phone/Whatsapp: + 86 18059884797
➱ QQ: 3095989363
➱ Website:www.sauldcs.com

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