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5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01 | New original

$1,600.00

5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01 Low voltage IGBTs and high voltage IGBTs are used in high voltage frequency converters. Igbts have fast switching performance, but high conductivity loss in high voltage frequency conversion, and require many IGBTs complex series together. For low voltage IGBT, the number of high voltage IGBT series is relatively less, but the conductive loss is higher. The increase of the total number of components reduces the reliability of the frequency converter, increases the size of the cabinet and increases the cost. Therefore, high voltage and high current frequency conversion governor in IGBT and GTO mature technology on the basis of a simple scheme -IGC. This optimized technique involves a redesign of the GTO to make it a significant design breakthrough. 5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01 The new IGCT introduces fast, balanced commutation and built-in low loss, Key design features of 5SHX08F4502-3BHB003387R0101-5SXE05-0151-GVC703AE01 include a reliable anode design for fast drain flow, low loss thin silicon wafers for fast switching, and integrated gate drivers using high-power semiconductors

Category: SKU: 5SHX08F4502 3BHB003387R0101

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