3BHL000392P0101 gate shut-off thyristor

The 3BHL000392P0101 gate shut-off thyristor is a kind of high-power semiconductor device, which has the characteristics

of high voltage, high current and fast switching. In the field of power electronics, Gtos are commonly used in high voltage

direct current transmission (HVDC), reactive power compensation (SVC), active filter (APF) and other applications.
The high voltage resistance characteristic of GTO thyristors refers to the device’s ability to withstand high reverse voltages

. Because there is a PN junction between the anode and cathode of the GTO thyristor, it has the characteristic of reverse

voltage resistance. Specifically, the reverse voltage withstand of GTO thyristors depends on its manufacturing process

and design parameters, and can usually be in the range of a few thousand volts to tens of thousands of volts.

When the GTO thyristor is in the reverse blocking state, the charge distribution of the PN junction inside the GTO

thyristor changes, forming a reverse electric field and preventing the flow of current. At this time, if the reverse voltage

applied to the GTO thyristor exceeds its reverse withstand voltage, a breakdown phenomenon will occur, resulting in a

rapid increase in current and damage to the device. Therefore, in the application, it is necessary to pay special

attention to the reverse voltage resistance characteristics of GTO thyristors and ensure that they are used within the safe working range.