5SHY3545L0016 3BHB019719R0101 GVC736BE101 91MM IGCT MODULE

Description

5SHY3545L0016 3BHB019719R0101 GVC736BE101 91MM IGCT MODULE

5SHY3545L0016 3BHB019719R0101 91MM IGCT module is a product of ABB, which belongs to high voltage

and large capacity power semiconductor devices, and is the core component of key equipment of DC backbone

network. IGCT (Integrated gate commutated thyristor) combines the high-speed switching characteristics of IGBT

(insulated gate bipolar transistor) and the high blocking voltage and low on-loss characteristics of GTO (gate turn-off thyristor).

It has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact

structure, low on-loss, etc., and low cost and high yield. The application prospect is good.

The module has been widely used in power systems, such as power grid installations and medium power industrial

drives. Its high-speed switching capability eliminates the need for buffer circuits, resulting in fewer power components

required and improved operational reliability. In the control system, it may be connected with other components such

as sensors, actuators and other control modules to provide a complete control system for industrial applications.

5SHY3545L0016

High-voltage and high-capacity power semiconductor devices are the core devices for power conversion and

power management in power electronic devices, also known as power electronic devices. Their main functions

include frequency conversion, variable voltage, rectification, power conversion and management, while saving

energy. Such devices are widely used in industrial, scientific research and other fields, especially in the field of

ultra-high voltage and UHV DC transmission projects, which provide strong support for key energy construction

fields such as national energy transmission and deployment, and green energy grid-connected transmission.

Among them, insulated gate bipolar transistor (IGBT) is a kind of high voltage and high power semiconductor

device, which is composed of bipolar transistor and insulated gate field effect tube, and is the core device for

manufacturing various kinds of high voltage and large capacity power converter and control equipment. In addition,

integrated gate commutated thyristor (IGCT) is also an important high voltage and large capacity power semiconductor

device, which combines IGBT and GTO technology on the basis of thyristor technology, and is suitable for high voltage and large capacity frequency conversion system.

Please contact Sunny sales@xiongbagk.cn for the best price.

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