5SHY3545L0020 3BHE014105R0001 

Description

5SHY3545L0020 3BHE014105R0001 GCT(lntergrated Gate Cmmutated Thyristors) is a new type of power semiconductor device used in large power electronics packages in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure for hard gate drive, using slow intermediate structure and transparent anode emitter technology. It has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of slow intermediate structure and shallow emitter technology, the dynamic loss is reduced by about 50%. This kind of device also integrates a continuous current diode with good dynamic characteristics on a chip, thus realizing the combination of low on-state voltage drop, high blocking voltage and stable switching characteristics of the transistor in its unique way

5SHY3545L0020 3BHE014105R0001 1GCT has made great progress in terms of power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets of devices. 1GCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery. It combines the stable turn-off ability of the transistor and the advantages of the low-on-state loss of the transistor. It gives full play to the performance of the thyristor in the on-off stage, and presents the characteristics of the transistor in the off-off stage. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device. Compared with GBT using transistor technology, it has higher performance on cut-off power/voltage. 5SHY3545L0020 3BHE014105R0001 widely used standard GTO drive technology causes uneven opening and closing process. The need for high-cost v/dtfdi/dt absorption circuit and high-power gate drive unit, resulting in reduced reliability, high price, and is not conducive to series, but before the high power MCT technology is not mature, IGCT has become the preferred solution for high-power low-frequency communicators

Please contact Sunny sales@xiongbagk.cn for the best price.

➱ sales manager: Sunny
➱ email mailto: sales@xiongbagk.cn
➱ Skype/WeChat: 18059884797
➱ phone/Whatsapp: + 86 18059884797
➱ QQ: 3095989363
➱ Website:www.sauldcs.com