中文版
Description
S-073N 3BHB009884R0021 ABB ACS2000 high voltage inverter
ACS2000 HV inverter S-073N 3BHB009884R0021 HV inverter phase module S-076N
3BHB009884R0021 Inverter IGCT frame debugging [Xionba Sunny introduces you] ABB rack S-073N 3BHB009884R0021.
Memory ③ Function block ④ Configuration ⑤ Mini-terminals on the front panel ⑥ Periodic transmission
of application data ⑦ Program differential monitoring ⑧ Ensuring PLC memory
S-073N 3BHB009884R0021 ABB
ACS2000 High Voltage inverter how to change the phase module. It can be connected directly to
the grid, you can also connect to the grid via a separate double-winding transformer or integrated
transformer and is suitable for direct grid connection or with input isolation transformer applications
Bit diodes 01, 02, absorption diodes 03, 04, absorption capacitance (:1, 02.
[0031] Among them, the three-level circuit composed of power components is shown in Figure 1. Four
IGCT T1, T2, T3 and T4 are successively connected between the anode of the dry absorption diode D3 and the
anode of the absorption diode D4. The anode of the absorption diode D3 is successively connected to the
cathode of the absorption diode D4 through the absorption capacitor CI and C2. Clamping diode DI cathode electricity
It is connected to the nodes between IGCT T1 and T2, and the anode of the pin position diode DI is
electrically connected to the dry absorbing capacitors C1 and C2
The anode electrical properties of the clamping diode D2 are connected to the nodes between IGCT T3 and T4, and the
cathode electrical properties of the clamping diode D2 are connected to the nodes between the absorbing capacitors
CI and C2. Preferably, in this embodiment, IGCTT1, T2, T3, and T4 are reverse-guided IGCTs.
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