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Description
MC91 HESG440588R4 HESG112714/B ABB | Pulse amplifier plate
Product technology
Integrated Gate CommutatedThyristor (IGCT) is a new type of semiconductor switching device from 1996. The device is formed by integrating gate drive circuit with gate commutator thyristor GCT. Gate commutator thyristor GCT is a new type of power semiconductor device based on GTO structure. It not only has the same high blocking ability and low on-state voltage drop as GTO, but also has the same switching performance as IGBT, that is, it is the result of GTO and IGBT complementing each other. It is a kind of ideal megawatt level and medium-voltage switching device. Ideal for use in 6kV and 10kV medium voltage switching circuits. When the IGCT chip is not in series and not in parallel, the two-level inverter capacity is 0.5M ~ 3MVA, and the three-level inverter capacity is 1M ~ 6MVA. If the reverse diode is separated and not integrated with IGCT, the capacity of two-level inverter can be expanded to 4.5MVA, and that of three-level inverter can be expanded to 9MVA. Now there are frequency converter series products composed of such devices. Currently, the IGCT is commercialized, and ABB manufactures IGCT products with a maximum performance parameter of 4.5kV / 4kA and a maximum development level of 6kV / 4kA. In 1998, Mitsubishi developed a 6kV / 4kA GCT thyristor with a diameter of 88mm.
Please contact Manager He
Engineer :Sunny
QQ:3095989363
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Email :sales@xiongbagk.cn
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condition: new original packaging
Warranty: All new or repaired parts come with a 12 month warranty
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