0010-23716 | Semiconductor Process Kit Component

Product Model | 0010-23716
Manufacturer | Applied Materials
Product Type | Semiconductor Process Kit
Component Material | High-Purity Silicon
Carbide (SiC) Dimensions | 320mm Ø x 8mm
Thickness ±0.1mm Surface
Roughness | Ra ≤0.2µm Max
Temperature | 1450°C (Continuous) Thermal
Conductivity | 120 W/m·K Vacuum
Compatibility | ≤1×10⁻⁸ Torr Chemical
Resistance | HF, HCl, Cl₂ Compatible
Certifications | SEMI F47, ISO 9001
Warranty | 18 Months Process Guarantee

Category:

Description

HONG KONG SAUL ELECTRICAL LIMITED, as an authorized supplier for Applied Materials (AMAT), delivers precision semiconductor manufacturing components. With ISO 14644-1 certified cleanroom handling, we ensure contamination-free solutions for advanced fabrication processes.

Technical Specifications

Product Model        | 0010-23716
Manufacturer         | Applied Materials
Product Type         | Semiconductor Process Kit Component
Material             | High-Purity Silicon Carbide (SiC)
Dimensions           | 320mm Ø x 8mm Thickness ±0.1mm
Surface Roughness    | Ra ≤0.2µm 
Max Temperature      | 1450°C (Continuous)
Thermal Conductivity | 120 W/m·K 
Vacuum Compatibility | ≤1x10⁻⁸ Torr
Chemical Resistance  | HF, HCl, Cl₂ Compatible
Certifications       | SEMI F47, ISO 9001
Warranty             | 18 Months Process Guarantee

0010-23716

Key Features and Advantages

The 0010-23716 features CVD-coated silicon carbide construction providing unmatched plasma erosion resistance in etch and deposition chambers. Its mirror-polished surface minimizes particle generation to <5 particles/cm² (>0.3µm). The component’s thermal uniformity of ±1.5°C across 300mm wafers ensures critical process stability. Pre-installed alignment pins enable tool-less replacement, reducing chamber downtime by 40% compared to legacy designs.

Application Areas

Essential for 7nm FinFET production, the 0010-23716 maintains process integrity in AMAT Centura® HDP-CVD systems. Memory manufacturers utilize its chlorine-resistant properties for 3D NAND stack etching. Compound semiconductor fabs leverage the component’s high thermal conductivity for GaN-on-SiC epitaxial growth. The ultra-high vacuum design supports EUV lithography chamber applications.

Related Products

0010-75892 (Alumina Heater Block for PVD Systems)
0190-29253 (Ceramic Gas Distribution Plate)
0010-45011 (SiC Susceptor for Epitaxy Chambers)
0010-33987 (Plasma-Focused RF Ring)
0010-67109 (Advanced Edge Exclusion Ring)

Installation & Maintenance

Installation preparation: Cleanroom ISO Class 4 or better required for handling the 0010-23716. Use certified vacuum-compatible lubricants on O-ring grooves. Maintenance recommendation: Our AMAT-certified technicians provide email-coordinated PM schedules with particle count verification reports. Replace after 5000 RF hours or when edge chamfer exceeds 0.25mm.

Product Assurance

Each 0010-23716 ships with AMAT-compatible material certificates and SEMI M69 traceability documentation. Our Critical Spares Program guarantees 72-hour global delivery with on-site installation support. Proprietary surface treatment extends mean time between cleans (MTBC) by 3x versus standard components.

Please contact Sunny sales@xiongbagk.cn for the best price.

➱ sales manager: Sunny
➱ email mailto: sales@xiongbagk.cn
➱ Skype/WeChat: 18059884797
➱ phone/Whatsapp: + 86 18059884797
➱ QQ: 3095989363
➱ Website:www.sauldcs.com