3BHB030310R0001 4500V 91mm 5SHY4045L0006 IGCT module

IGCT (Integrated Gate Commutated Thyristor) module, or integrated gate commutated thyristor, is a kind

of high-voltage and high-power semiconductor device. It is a combination of IGBT (insulated gate bipolar transistor) and

GCT (gate commutated thyristor) technology, which combines the advantages of high input impedance of

IGBT and high blocking capability and low on-state voltage drop of GCT.

IGCT modules are commonly used in high-voltage direct current (HVDC) transmission, high-power frequency

converters and other applications, and are key components for efficient and reliable energy conversion in these

fields. In the application, the IGCT module realizes the conversion and transmission of electrical energy by precisely controlling its on-off and off-off.

However, it is important to note that the design, manufacture and application of IGCT modules require a high

degree of expertise and skill. For users, the correct selection, installation and maintenance of IGCT

module to ensure its normal operation is the key to ensure the stable and efficient operation of the whole system.

In general, IGCT module is a kind of high-voltage and high-power semiconductor device with high

performance and wide application prospect, which plays an increasingly important role in the field of power electronics.

5SHY4045L0006-3BHB030310R0001

IGCT modules and MOSFETs differ significantly in several ways.

First of all, from the perspective of working principle, the IGCT module combines the technology of IGBT and

GCT to achieve the advantages of high input impedance, high blocking capability and low on-state voltage drop.

MOSFET (metal oxide semiconductor field effect tube) is through the drain-source electric field generated by the

base region to promote the channel conductive layer to carry out carrier migration and composite

phenomenon, to achieve the function of opening/closing.

Secondly, in terms of structure and application, the structure of MOSFET is relatively simple, easy to integrate and

manufacture, and has the advantages of fast switching speed, good high-frequency characteristics, excellent

thermal stability, simple driving circuit, and small driving power. Therefore, it is widely used in high-frequency switching

power supplies and high-speed switching applications. IGCT module is usually used in high voltage direct current

transmission (HVDC), high power inverter and other high voltage and high power occasions, to achieve efficient and reliable energy conversion.

Finally, from the perspective of dissipated power and switching speed, MOSFETs have low switching loss and on-resistance,

which is suitable for high-frequency switching power supplies. Although the IGCT module has a relatively slow switching

speed, it has a high dissipation capacity in high-power applications and is suitable for high-power AC modulation.