3BHB204520R0001 RECOVERY DIODE ACS6000

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The internal structure of the fast recovery diode is different from that of the ordinary diode. It is composed of P-I-N silicon wafer by adding the base region I in the middle of the P-type and N-type silicon material. Because the base area is very thin and the reverse recovery charge is very small, not only the trr value is greatly reduced, but also the transient forward voltage drop is reduced, so that the tube can withstand very high reverse operating voltage. The reverse recovery time of the fast recovery diode is generally a few hundred nanoseconds, the forward voltage drop is about 0.6V, the forward current is several amps to several thousand amps, and the reverse peak voltage can be several hundred to several thousand volts.