5SDF 1045H0002 3BHL000986P3002 DIODE

The crystal diode is a PN junction formed by P-type semiconductor and N-type semiconductor. It forms a space charge layer on both sides of its interface and has a self-built electric field. When there is no applied voltage, the diffusion current caused by the difference of carrier concentration on both sides of the PN junction is equal to the drift current caused by the self-built electric field, so it is in a state of electric equilibrium.

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WiThe crystal diode is a PN junction formed by P-type semiconductor and N-type semiconductor. It forms a space charge layer on both sides of its interface and has a self-built electric field. When there is no applied voltage, the diffusion current caused by the difference of carrier concentration on both sides of the PN junction is equal to the drift current caused by the self-built electric field, so it is in a state of electric equilibrium.

 

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