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Description
SHY4045L0001 3BHB018162R0001 Integrated Gate Commutated Thyristors (ntergrated Gate Commutated Thyristors) is a new type of power semiconductor device used in large power electronics kits in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, which uses integrated gate structure for hard zone movement, slow intermediate structure and transparent anode emitter technology. It has the characteristics of crystal smell tube and star tube. 5SHY4045L0001 3BHB018162R0001 reduces the dynamic cost loss by about 50% due to the use of slow medium structure and shallow emitter technology. In addition, this type of polymer is also integrated into a continuous current diode with good dynamic cost characteristics on a single chip. Thus, the combination of low pass local voltage drop, high blocking voltage and transistor stable switching characteristics of thyristor is realized in its special way
GCT has made great progress in terms of power, availability, switching speed, efficiency, cost, weight and volume, bringing a new leap forward to power electronics sets.5SHY4045L0001 3BHB018162R0001 integrates GTO chip with anti-parallel diode and gate drive circuit. Then it is connected with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low pass loss of the transistor, the performance of the transistor is played in the on-stage, and the characteristics of the transistor are displayed in the off-stage.
5shy4045l00013bhb018162r0001 with large current, high voltage, high switching frequency, can be high, compact structure, low loss, and cause the low, high yield, 5SHY4045L0001 3BHB018162R0001 using crystal sniffing technology GTO is a commonly used high-power switch, which has a higher performance than the GBT using transistor technology in intercepting video music, but the widely used standard GTO tapping technology causes uneven opening and closing process. To high cost dV/dtfdi/dt absorption circuit and high-power grid double-action unit, resulting in reduced availability, high price, is not conducive to series, 5SHY4045L0001 3BHB018162R0001 However, in high-power MCT technology is not mature before, IGCT has become the preferred solution for high voltage and high power low frequency communicators
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