5SHY4045L0001 Asymmetric Integrated Gate Thyristor

Description

5SHY4045L0001 Asymmetric Integrated Gate Thyristor

· High snubberless turn-off rating
· Optimized for medium frequency
· High electromagnetic immunity
· Simple control interface with status feedback
· AC or DC supply voltage
· Option for series connection (contact factory)

Rep. peak off-state voltage VDRM Gate Unit energized 4500 V
Permanent DC voltage for
100 FIT failure rate of GCT
VDC Ambient cosmic radiation at sea
level in open air. Gate Unit energized
2800 V
Reverse voltage VRRM 17 V

5SHY4045L0001

Parameter Symbol Conditions min typ max Unit
Mounting force Fm 36 40 44 kN
Characteristic values
Parameter Symbol Conditions min typ max Unit
Pole-piece diameter Dp ± 0.1 mm 85 mm
Housing thickness H clamped Fm =40kN 25.7 26.2 mm
Weight m 2.9 kg
Surface creepage distance Ds Anode to Gate 33 mm
Air strike distance Da Anode to Gate 10 mm
Length l ± 1.0 mm 439 mm
Height h ± 1.0 mm 41 mm
Width IGCT w ± 1.0 mm 173 mm

Please contact Sunny sales@xiongbagk.cn for the best price.

➱ sales manager: Sunny
➱ email mailto: sales@xiongbagk.cn
➱ Skype/WeChat: 18059884797
➱ phone/Whatsapp: + 86 18059884797
➱ QQ: 3095989363
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