中文版
Description
5SHY4045L0004 3BHB021400R0002 is the combined name of IGCT(gate commutator thyristor)
and integrated gate drive circuit. It has the high blocking ability of GTO, low on-state voltage
drop, and the same switching performance as IGBT. It is a kind of ideal megawatt level, medium
voltage switching device. Widely used in high power medium voltage converter. The basic working principle is as follows:
When operating in the on-state, IGCT is a positive feedback switch like a thyristor, which is
characterized by strong current-carrying capacity and reduced on-state voltage. In the off state, the
pn junction between the IGCT gate and cathode enters the reverse bias in advance, and effectively
exits the work, and the whole device works in a transistor mode. When the equivalent circuit IGCT in
these two states is off, the P base n emitter is reversed by opening a switch in series with the cathode (usually MOSFET).
This quickly prevents cathode injection and forces the overall anode current to be converted into
a gate current (usually within lµs), thus transforming the GTO into a contactless base region PNP transistor,
eliminating the cathode emitter contraction effect. As a result, its maximum turn-off current is
much higher than the rated current of conventional Gtos. Because IGCT is turned off at gain close
to 1, the protective absorption circuit can be omitted. The so-called “GTO” state can be avoided because the
anode current is turned off in transistor mode in an open base state. The turn-off process allows a higher
anode voltage rise rate, and the turn-off action is very reliable. Therefore, IGCT combines the
low-pass voltage drop and high blocking voltage of the thyristor with the stable turn-off
characteristics of the transistor. It is an ideal high power semiconductor switching device. Because the gate
drive circuit must quickly transfer all positive current during the shutdown process. Therefore, the IGCT design must use a
gate drive circuit with relatively low inductance. In practice, multilayer wiring printed circuit boards can be
used according to device requirements. In summary, it can be seen that IGCT has the following
characteristics: the IGCT circulation shutdown time can be reduced to less than lµs, which lays the
foundation for realizing simple and durable high-voltage series; Because IGCT can be very uniform
operation, so can significantly reduce or ignore the loss of the absorption circuit and inverter; The gate
driving power can be significantly reduced due to the low gate shutdown load.
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