5SHY3545L0014 3BHE023784R0001 IGCT phase module

The superior performance of IEGT determines that it is very suitable for use in various high-power converters. A fast

anti-parallel diode is integrated into the IEGT, and the IEGT has a wide safe working area and can withstand high dv/dt

and di/dt, so the IEGT inverter does not need anode reactance, only a common turn-off absorption circuit. In addition, the

gate drive power of IEGT is less than lW, and the gate drive module is very small. Because IEGT inverter uses fewer components,

so the reliability has been greatly improved. Its typical characteristics are as follows:

Low on-off voltage drop like GTO;

The same as IGBT has wide safe working area;

● The gate adopts voltage drive mode;

● High working frequency 500-1000Hz;

● High reliability.

To sum up, IEGT combines the advantages of GTO and IGBT in one. It has the advantages of lower conduction voltage,

high operating frequency, voltage-type gate drive, wide safe working area, and easy to use in series.

In terms of power level and voltage level, the positioning of IGCT, IEGT and IGBT is far different. IGCT and IEGT are

mainly used in high-voltage and large-capacity situations, while IGBT is used in low-voltage and high-frequency

small-capacity situations. From the above two sections, the following conclusions can be drawn:

● The switching frequency of IGCT and IEGT is very high, between 500-1000Hz. Although it is far less than IGBT, it is enough in many occasions.

●IGCT is the current pulse driver, the driving power is relatively large, but its gate drive circuit is integrated in the IGCT,

external only gate drive power supply interface and used to transmit the trigger signal and feedback state of the fiber, the

drive volume is small and simple. IEGT is a voltage-driven device with driving power similar to IGBT.

●IGCT is a compound thyristor tube, which can be directly connected in series, so it is unnecessary to consider the pressure

equating measures. IGBT in series use should consider pressure equalization measures.

●IGCT and IEGT on-off loss is very low, especially IGCT, if not driving power, the same voltage class of IGCT loss is lower than IGBT.

● For IGCT and IEGT, 4.5kV/3kA is the more common specification, its capacity and voltage level is much larger than IGBT,

more suitable for application in high power FACTS device and high power transmission device